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IPP80N06S209AKSA2 - Infineon

Description: Trans MOSFET N-CH 55V 80A Automotive AEC-Q101 3-Pin(3+Tab) TO-220 Tube

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IPP80N06S209AKSA2 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3-1(H=4.4mm)
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3D Models
IPP80N06S209AKSA2 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO220-3-1(H=4.4mm)
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IPP80N06S209AKSA2 Details

  • Manufacturer Part Number:

    IPP80N06S209AKSA2

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    370 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    80 A

  • Drain-source On Resistance-Max:

    0.0091 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    320 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPP80N06S209AKSA2 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout for optimal thermal performance in their application note AN2013-03. It suggests using a thermal pad on the bottom of the package, connected to a large copper area on the PCB to dissipate heat efficiently.
  • To ensure SOA compliance, you should consider the maximum voltage, current, and power dissipation ratings of the device. You can use Infineon's SOA calculator tool or consult their application notes to determine the safe operating area for your specific application.
  • The IPP80N06S209AKSA2 has an integrated ESD protection diode, but it's still recommended to follow proper ESD handling procedures during assembly and handling. You should also consider adding external ESD protection devices if your application requires it.
  • Yes, the IPP80N06S209AKSA2 is qualified according to AEC-Q101, making it suitable for automotive applications. However, you should consult Infineon's documentation and ensure that your design meets the specific requirements for your target application.
  • The gate resistor value depends on the specific requirements of your application, such as the switching frequency, voltage, and current. You can use Infineon's gate resistor calculation tool or consult their application notes to determine the optimal gate resistor value for your design.

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IPP80N06S209AKSA2 Overview

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Part Image IPP80N06S209AKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IPP80N06S2-09 Infineon Technologies AG

Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB