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IPP80R1K2P7XKSA1 - Infineon

Description: MOSFET LOW POWER_NEW

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IPP80R1K2P7XKSA1 - Infineon - PCB symbol
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PCB Footprints
IPP80R1K2P7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO220-3 HEIGHT 4.57
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3D Models
IPP80R1K2P7XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO220-3 HEIGHT 4.57
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IPP80R1K2P7XKSA1 Details

  • Manufacturer Part Number:

    IPP80R1K2P7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    10 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain-source On Resistance-Max:

    1.2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    11 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP80R1K2P7XKSA1 Frequently Asked Questions (FAQs)

  • The IPP80R1K2P7XKSA1 can operate from -40°C to 150°C, with a maximum junction temperature of 150°C.
  • The device has a thermal pad on the bottom side, which should be connected to a heat sink or a thermal interface material to ensure proper heat dissipation. Additionally, the PCB design should allow for good airflow and thermal conduction.
  • The recommended gate drive voltage for the IPP80R1K2P7XKSA1 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • The device has built-in protection features such as overvoltage protection (OVP) and overcurrent protection (OCP). Additionally, external protection circuits such as TVS diodes and fuses can be used to protect the device from overvoltage and overcurrent conditions.
  • The IPP80R1K2P7XKSA1 can switch at frequencies up to 100 kHz, but the maximum switching frequency depends on the specific application and operating conditions.

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IPP80R1K2P7XKSA1 Overview

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