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IPP80R360P7XKSA1 - Infineon

Description: MOSFET LOW POWER_NEW

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IPP80R360P7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPP80R360P7XKSA1
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IPP80R360P7XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - IPP80R360P7XKSA1
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IPP80R360P7XKSA1 Details

  • Manufacturer Part Number:

    IPP80R360P7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    TO-220, 3 PIN

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    34 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    800 V

  • Drain-source On Resistance-Max:

    0.36 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    34 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPP80R360P7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPP80R360P7XKSA1 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's drain pad, and ensure the heat sink is securely fastened to the device. Additionally, consider the thermal resistance of the heat sink and the PCB layout to minimize thermal impedance.
  • The recommended gate drive voltage for the IPP80R360P7XKSA1 is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure optimal performance.
  • Yes, the IPP80R360P7XKSA1 is suitable for high-frequency switching applications up to 1 MHz. However, it's essential to consider the device's switching characteristics, such as the rise and fall times, and ensure the gate drive circuitry is capable of providing a clean, high-frequency signal.
  • To protect the IPP80R360P7XKSA1 from overvoltage and overcurrent conditions, consider implementing overvoltage protection (OVP) and overcurrent protection (OCP) circuits. These can include voltage clamps, current sense resistors, and protection ICs. Additionally, ensure the device is operated within its specified voltage and current ratings.

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IPP80R360P7XKSA1 Overview

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