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IPS65R1K5CEAKMA1 - Infineon

Description: N-Channel 650 V 3.1A (Tc) 28W (Tc) Through Hole TO-251

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IPS65R1K5CEAKMA1 - Infineon - PCB symbol
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PCB Footprints
IPS65R1K5CEAKMA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO251_2023
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3D Models
IPS65R1K5CEAKMA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO251_2023
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IPS65R1K5CEAKMA1 Details

  • Manufacturer Part Number:

    IPS65R1K5CEAKMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    IPAK-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    26 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain-source On Resistance-Max:

    1.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    8.3 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPS65R1K5CEAKMA1 Frequently Asked Questions (FAQs)

  • The IPS65R1K5CEAKMA1 has an operating temperature range of -40°C to 150°C, making it suitable for high-reliability applications.
  • The device has a thermal pad on the bottom side, which should be connected to a heat sink or a thermal interface material to ensure proper heat dissipation. Additionally, the PCB design should allow for good airflow and thermal conduction.
  • The recommended gate drive voltage for the IPS65R1K5CEAKMA1 is between 10V and 15V, with a maximum gate drive current of 2A.
  • Yes, the IPS65R1K5CEAKMA1 is designed for high-frequency switching applications up to 100 kHz, making it suitable for power supplies, motor control, and other high-frequency applications.
  • The device has built-in overvoltage and overcurrent protection, but additional external protection circuits may be necessary depending on the application. It is recommended to use a voltage regulator and current sense resistors to monitor the device's voltage and current.

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IPS65R1K5CEAKMA1 Overview

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