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IPS70R2K0CEAKMA1 - Infineon

Description: N-Channel 700 V 4A (Tc) 42W (Tc) Through Hole PG-TO251-3-11

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IPS70R2K0CEAKMA1 - Infineon - PCB symbol
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PCB Footprints
IPS70R2K0CEAKMA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO251_2022
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3D Models
IPS70R2K0CEAKMA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO251_2022
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IPS70R2K0CEAKMA1 Details

  • Manufacturer Part Number:

    IPS70R2K0CEAKMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    IPAK-3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    4 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain-source On Resistance-Max:

    2 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    6.3 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPS70R2K0CEAKMA1 Frequently Asked Questions (FAQs)

  • The IPS70R2K0CEAKMA1 has an operating temperature range of -40°C to 150°C, making it suitable for high-reliability applications.
  • The device has a thermal pad on the bottom that should be connected to a heat sink or a thermal interface material to ensure proper heat dissipation. Additionally, the PCB design should allow for good airflow and thermal conduction.
  • The recommended gate drive voltage for the IPS70R2K0CEAKMA1 is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IPS70R2K0CEAKMA1 is designed for high-frequency switching applications up to 100 kHz, making it suitable for power supplies, motor control, and other high-frequency applications.
  • The device has built-in overvoltage and overcurrent protection, but additional protection circuits may be necessary depending on the application. It is recommended to use a voltage clamp or a TVS diode to protect the device from overvoltage, and a current sense resistor or a current limiter to protect from overcurrent.

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IPS70R2K0CEAKMA1 Overview

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