Part Image

IPS70R900P7SAKMA1 - Infineon

Description: INFINEON - IPS70R900P7SAKMA1 - MOSFET, N-CH, 700V, 6A, TO-251

Download IPS70R900P7SAKMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPS70R900P7SAKMA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPAK SL (TO-251 SL)
click to zoom
3D Models
IPS70R900P7SAKMA1 - Infineon  - 3D model - Transistor Outline, Vertical - IPAK SL (TO-251 SL)
click to zoom

IPS70R900P7SAKMA1 Details

  • Manufacturer Part Number:

    IPS70R900P7SAKMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    IPAK-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    700 V

  • Drain Current-Max (ID):

    6 A

  • Drain-source On Resistance-Max:

    0.9 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    30.5 W

  • Pulsed Drain Current-Max (IDM):

    12.8 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPS70R900P7SAKMA1 Frequently Asked Questions (FAQs)

  • The IPS70R900P7SAKMA1 has an operating temperature range of -40°C to 150°C.
  • Proper cooling can be achieved through the use of a heat sink, thermal interface material, and ensuring good airflow around the device.
  • A recommended PCB layout can be found in the application note AN2013-01 from Infineon, which provides guidelines for optimal PCB design and layout.
  • Overvoltage protection can be achieved through the use of a voltage regulator or a transient voltage suppressor. Overcurrent protection can be achieved through the use of a current sense resistor and a fuse or a circuit breaker.
  • The recommended gate drive voltage for the IPS70R900P7SAKMA1 is between 10V and 15V.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPS70R900P7SAKMA1 Overview

Use the download button to access the IPS70R900P7SAKMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPS70, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPS70R900P7SAKMA1

Showing 0 results