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IPT007N06N - Infineon

Description: MOSFET N-Channel 60V 300A OptiMOS HSOF9 Infineon IPT007N06N N-channel MOSFET Transistor, 300 A, 60 V, 8-Pin HSOF

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PCB Footprints
IPT007N06N - Infineon PCB footprint - Other - Other - PG-HSOF-8-1
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3D Models
IPT007N06N - Infineon  - 3D model - Other - PG-HSOF-8-1
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IPT007N06N Details

  • Manufacturer Part Number:

    IPT007N06N

  • Pbfree Code:

    No

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Pin Count:

    8

  • Country Of Origin:

    Austria, Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    1100 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    60 V

  • Drain Current-Max (ID):

    52 A

  • Drain-source On Resistance-Max:

    0.00075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-F8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    1200 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Element Material:

    SILICON

IPT007N06N Frequently Asked Questions (FAQs)

  • The maximum operating frequency of IPT007N06N is 100 kHz, but it can be operated up to 400 kHz with reduced performance.
  • To ensure the safe operating area (SOA) of IPT007N06N, the device should be operated within the recommended voltage and current ratings, and the junction temperature should be kept below 150°C.
  • The thermal resistance of IPT007N06N is Rth(j-a) = 2.5 K/W and Rth(j-c) = 1.5 K/W.
  • Yes, IPT007N06N can be used in high-temperature applications up to 150°C, but the performance may degrade at higher temperatures.
  • To protect IPT007N06N from electrostatic discharge (ESD), handle the device with anti-static precautions, use ESD-protected workstations, and ensure that the device is properly grounded during handling and assembly.

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