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IPT60R022S7 - Infineon

Description: Infineon HIGH POWER_NEW

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IPT60R022S7 - Infineon PCB footprint - Other - Other - PG-HSOF-8-2_23
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IPT60R022S7 - Infineon  - 3D model - Other - PG-HSOF-8-2_23
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IPT60R022S7 Details

  • Manufacturer Part Number:

    IPT60R022S7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Malaysia

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    289 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    23 A

  • Drain-source On Resistance-Max:

    0.022 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    390 W

  • Pulsed Drain Current-Max (IDM):

    375 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPT60R022S7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature of the IPT60R022S7 is 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 60W. Additionally, ensure good airflow around the heat sink to prevent thermal throttling.
  • The recommended gate drive voltage for the IPT60R022S7 is between 10V and 15V. However, the device can tolerate gate voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device and ensure optimal performance.
  • Yes, the IPT60R022S7 is suitable for high-frequency switching applications due to its low gate charge (Qg) of 22nC and low output capacitance (Coss) of 220pF. However, it's essential to consider the device's switching losses, thermal performance, and PCB layout to ensure reliable operation at high frequencies.
  • To protect the IPT60R022S7 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions.

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