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IPT60R028G7XTMA1 - Infineon

Description: INFINEON - IPT60R028G7XTMA1 - MOSFET, N-CH, 600V, 75A, HSOF

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IPT60R028G7XTMA1 Details

  • Manufacturer Part Number:

    IPT60R028G7XTMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    288 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.028 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PSSO-F3

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    245 A

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    FLAT

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPT60R028G7XTMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPT60R028G7XTMA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 0.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IPT60R028G7XTMA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, IPT60R028G7XTMA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are matched and the gate drive circuitry is designed to handle the increased current.
  • The maximum allowable voltage transient for IPT60R028G7XTMA1 is ±10% of the maximum rated voltage (600V).

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