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IPU60R2K1CEAKMA1 - Infineon

Description: MOSFET CONSUMER 600VCoolMOSªCEPowerTransistor

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PCB Footprints
IPU60R2K1CEAKMA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO251
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3D Models
IPU60R2K1CEAKMA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO251
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IPU60R2K1CEAKMA1 Details

  • Manufacturer Part Number:

    IPU60R2K1CEAKMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    End Of Life

  • Package Description:

    IPAK-3

  • Country Of Origin:

    Germany, Mainland China, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    11 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    3.7 A

  • Drain-source On Resistance-Max:

    2.1 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-251

  • JESD-30 Code:

    R-PSIP-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -40 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    38 W

  • Pulsed Drain Current-Max (IDM):

    6 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPU60R2K1CEAKMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPU60R2K1CEAKMA1 is -40°C to 125°C.
  • The IPU's clock settings can be configured through the Clock Domain Controller (CDC) registers. Refer to the IPU60R2K1CEAKMA1 user manual for detailed instructions.
  • The maximum current consumption of the IPU60R2K1CEAKMA1 is 1.2 A at 1.2 V and 125°C.
  • Power management for the IPU can be implemented using the Power Management Unit (PMU) and the Clock Domain Controller (CDC). Refer to the IPU60R2K1CEAKMA1 user manual for detailed instructions.
  • The recommended PCB layout for the IPU60R2K1CEAKMA1 is a 4-layer board with a solid ground plane and a separate power plane. Refer to the IPU60R2K1CEAKMA1 user manual for detailed guidelines.

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IPU60R2K1CEAKMA1 Overview

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Part Image IPU60R2K1CE Infineon Technologies AG

Power Field-Effect Transistor, 600V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251