Part Image

IPW60R017C7XKSA1 - Infineon

Description: 600V CoolMOS C7 Power Transistor

Download IPW60R017C7XKSA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPW60R017C7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247
click to zoom
3D Models
IPW60R017C7XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247
click to zoom

IPW60R017C7XKSA1 Details

  • Manufacturer Part Number:

    IPW60R017C7XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    582 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    109 A

  • Drain-source On Resistance-Max:

    0.017 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    495 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW60R017C7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPW60R017C7XKSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good thermal contact between the IGBT and heat sink.
  • The recommended gate resistor value for IPW60R017C7XKSA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, IPW60R017C7XKSA1 can be used in a parallel configuration, but it's essential to ensure that the gate drive signals are synchronized and the IGBTs are matched in terms of threshold voltage and transconductance.
  • To protect the IGBT, use a suitable overvoltage protection circuit, such as a voltage clamp or a zener diode, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.

Trust Checks

This model has been built in collaboration with the manufacturer.
Manufacturer Collaborated
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPW60R017C7XKSA1 Overview

Use the download button to access the IPW60R017C7XKSA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPW60, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPW60R017C7XKSA1

Showing 0 results