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IPW60R024P7XKSA1 - Infineon

Description: MOSFET HIGH POWER_NEW

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PCB Footprints
IPW60R024P7XKSA1 - Infineon PCB footprint - Other - Other - PG-TO247-3_2022
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3D Models
IPW60R024P7XKSA1 - Infineon  - 3D model - Other - PG-TO247-3_2022
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IPW60R024P7XKSA1 Details

  • Manufacturer Part Number:

    IPW60R024P7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Austria, Germany, Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    406 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    101 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    386 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW60R024P7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPW60R024P7XKSA1 is -55°C to 175°C.
  • To ensure the safe operating area (SOA) of IPW60R024P7XKSA1, follow the guidelines in the datasheet for voltage, current, and power dissipation. Additionally, consider the thermal management and heat dissipation of the device.
  • The recommended gate resistor value for IPW60R024P7XKSA1 is typically in the range of 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • The parasitic diode in IPW60R024P7XKSA1 can be handled by using a diode in parallel with the MOSFET, or by using a MOSFET with an integrated diode. Additionally, consider using a gate driver with a built-in diode emulation feature.
  • The maximum allowed voltage for the gate-source voltage (VGS) of IPW60R024P7XKSA1 is ±20 V.

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