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IPW60R075CPAFKSA1 - Infineon

Description: MOSFET AUTOMOTIVE

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IPW60R075CPAFKSA1 - Infineon - PCB symbol
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PCB Footprints
IPW60R075CPAFKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3*
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3D Models
IPW60R075CPAFKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-TO247-3*
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IPW60R075CPAFKSA1 Details

  • Manufacturer Part Number:

    IPW60R075CPAFKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Part Package Code:

    TO-247

  • Package Description:

    GREEN, PLASTIC PACKAGE-3

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    1150 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    39 A

  • Drain-source On Resistance-Max:

    0.075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    130 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW60R075CPAFKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPW60R075CPAFKSA1 is -40°C to 150°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and optimizing the PCB design for heat dissipation.
  • The recommended gate resistor value for the IPW60R075CPAFKSA1 is typically in the range of 10 Ω to 20 Ω, depending on the specific application and switching frequency.
  • Yes, the IPW60R075CPAFKSA1 can be used in a parallel configuration to increase current handling, but it's essential to ensure proper synchronization and current sharing between the parallel devices.
  • To protect the IPW60R075CPAFKSA1 from overvoltage and overcurrent conditions, it's recommended to use a combination of voltage regulators, current sensors, and protection circuits, such as overvoltage protection (OVP) and overcurrent protection (OCP) circuits.

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IPW60R075CPAFKSA1 Overview

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Part Image IPW60R075CP Infineon Technologies AG

Power Field-Effect Transistor, 39A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IPW60R075CPA Infineon Technologies AG

Power Field-Effect Transistor, 39A I(D), 600V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247