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IPW60R099P6 - Infineon

Description: MOSFET HIGH POWER PRICE/PERFORM

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IPW60R099P6 - Infineon - PCB symbol
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IPW60R099P6 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPW60R099P6
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IPW60R099P6 - Infineon - 3D model - Transistor Outline, Vertical - IPW60R099P6
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IPW60R099P6 Details

  • Manufacturer Part Number:

    IPW60R099P6

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.18

  • Avalanche Energy Rating (Eas):

    796 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    37.9 A

  • Drain-source On Resistance-Max:

    0.099 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    278 W

  • Pulsed Drain Current-Max (IDM):

    109 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW60R099P6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPW60R099P6 is -40°C to 150°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within the recommended voltage and current ratings.
  • The recommended gate resistor value for the IPW60R099P6 is between 10 ohms and 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPW60R099P6 can be used in a parallel configuration to increase current handling, but ensure proper synchronization and thermal management to avoid uneven current distribution.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current sense resistor, to protect the IPW60R099P6 from overvoltage and overcurrent conditions.

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IPW60R099P6 Overview

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IPW60R099P6 Alternates

Showing results

Image Part Number Model
Part Image IPW60R099P6XKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IPW60R099CPAFKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IPW60R099CPA Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IPW60R099CP Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
Part Image IPW60R099CPXK Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
For a full list of alternate parts for IPW60R099P6, check out Findchips.com