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IPW60R099P7XKSA1 - Infineon

Description: MOSFETs HIGH POWER_NEW N-Channel 600 V 31A (Tc) 117W (Tc) Through Hole PG-TO247-3

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IPW60R099P7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247-3
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3D Models
IPW60R099P7XKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 247-3
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IPW60R099P7XKSA1 Details

  • Manufacturer Part Number:

    IPW60R099P7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6.18

  • Avalanche Energy Rating (Eas):

    105 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.099 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW60R099P7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPW60R099P7XKSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPW60R099P7XKSA1 is between 10 Ω to 100 Ω, depending on the specific application and switching frequency.
  • Yes, IPW60R099P7XKSA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • Use a suitable overvoltage protection circuit and a current sense resistor to monitor and limit the current, and consider using a fuse or a circuit breaker to protect against overcurrent conditions.

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IPW60R099P7XKSA1 Overview

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Part Image IPW60R099P6XKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW60R099CPAFKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW60R099P6 Infineon Technologies AG

Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW60R099CP Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW60R099CPXK Infineon Technologies AG

Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

For a full list of alternate parts for IPW60R099P7XKSA1, check out Findchips.com