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IPW60R180P7XKSA1 - Infineon

Description: MOSFET HIGH POWER_NEW

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IPW60R180P7XKSA1 - Infineon - PCB symbol
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PCB Footprints
IPW60R180P7XKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-247_3
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3D Models
IPW60R180P7XKSA1 - Infineon - 3D model - Transistor Outline, Vertical - PG-247_3
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IPW60R180P7XKSA1 Details

  • Manufacturer Part Number:

    IPW60R180P7XKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    17 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    56 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain-source On Resistance-Max:

    0.18 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    53 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW60R180P7XKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPW60R180P7XKSA1 is -40°C to 150°C.
  • Proper thermal management can be achieved by ensuring good heat sink design, applying thermal interface material, and maintaining a low thermal resistance between the IGBT and heat sink.
  • The recommended gate resistor value for IPW60R180P7XKSA1 is typically in the range of 10 ohms to 20 ohms, depending on the specific application and switching frequency.
  • Yes, IPW60R180P7XKSA1 can be used in a parallel configuration, but it's essential to ensure that the IGBTs are properly matched, and the gate drive and thermal management are designed to handle the increased current and heat generation.
  • The maximum allowable voltage transient for IPW60R180P7XKSA1 is typically 1.5 times the maximum rated voltage, but it's recommended to consult the datasheet and application notes for specific guidance.

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IPW60R180P7XKSA1 Overview

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IPW60R180P7XKSA1 Alternates

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Part Image IPW60R180P7 Infineon Technologies AG

Power Field-Effect Transistor, 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247