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IPW60R190P6 - Infineon

Description: MOSFETs HIGH POWER_PRC/PRFRM

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IPW60R190P6 - Infineon  - 3D model
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IPW60R190P6 Details

  • Manufacturer Part Number:

    IPW60R190P6

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.95

  • Avalanche Energy Rating (Eas):

    419 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    20.2 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    57 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW60R190P6 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPW60R190P6 is -40°C to 150°C.
  • To ensure reliability, follow the recommended PCB layout and thermal management guidelines, and ensure proper cooling and heat dissipation.
  • The recommended gate resistor value for the IPW60R190P6 is typically in the range of 10 ohms to 100 ohms, depending on the specific application and switching frequency.
  • Yes, the IPW60R190P6 can be used in a parallel configuration to increase current handling, but ensure proper synchronization and current sharing between devices.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current sense resistor, to protect the IPW60R190P6 from overvoltage and overcurrent conditions.

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IPW60R190P6 Overview

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Part Image IPW60R190P6FKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247