Part Image

IPW65R029CFD7 - Infineon

Description: 650V CoolMOS CFD7 SJ PowerDevice

Download IPW65R029CFD7 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPW65R029CFD7 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - pg-to247-3
click to zoom
3D Models
IPW65R029CFD7 - Infineon  - 3D model - Transistor Outline, Vertical - pg-to247-3
click to zoom

IPW65R029CFD7 Details

  • Manufacturer Part Number:

    IPW65R029CFD7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-06-19

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    358 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    69 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    305 W

  • Pulsed Drain Current-Max (IDM):

    304 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW65R029CFD7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPW65R029CFD7 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate within -20°C to 125°C for optimal performance and reliability.
  • Proper cooling is crucial for the device's reliability and performance. Ensure good thermal contact between the device and the heat sink, and use a thermal interface material (TIM) if necessary. The recommended thermal resistance (Rth) is ≤ 1.5 K/W.
  • For optimal performance, follow Infineon's recommended PCB layout guidelines, including using a solid ground plane, minimizing track lengths, and using a 4-layer PCB with a dedicated power plane. Also, ensure proper decoupling and bypassing of the device.
  • The device's power dissipation is approximately 65W. Ensure proper thermal management by using a heat sink with a sufficient thermal capacity, and consider using a fan or other cooling mechanisms if necessary. Monitor the device's temperature and adjust the cooling system accordingly.
  • The recommended gate drive configuration is a non-inverting driver with a voltage swing of 12V to 15V. For biasing, use a voltage regulator to provide a stable voltage supply to the device. Refer to Infineon's application notes and design guides for more detailed information.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPW65R029CFD7 Overview

Use the download button to access the IPW65R029CFD7 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPW65, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPW65R029CFD7

Showing 0 results