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IPW65R080CFDA - Infineon

Description: MOSFET N-Ch 650V 43.3A TO247-3

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IPW65R080CFDA - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IPW65R080CFDA
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IPW65R080CFDA - Infineon  - 3D model - Transistor Outline, Vertical - IPW65R080CFDA
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IPW65R080CFDA Details

  • Manufacturer Part Number:

    IPW65R080CFDA

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    1160 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    43.3 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    137 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW65R080CFDA Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPW65R080CFDA is -40°C to 150°C.
  • To ensure reliability, it's essential to follow the recommended thermal design and layout guidelines, and to implement adequate cooling mechanisms, such as heat sinks or thermal interfaces.
  • The recommended gate drive voltage for the IPW65R080CFDA is between 10V and 15V, with a maximum voltage of 20V.
  • To protect the IPW65R080CFDA from overvoltage and overcurrent, it's recommended to use a suitable voltage regulator and overcurrent protection circuitry, such as a fuse or a current limiter.
  • The maximum allowed power dissipation for the IPW65R080CFDA is 65W, and it's essential to ensure that the device is operated within this limit to prevent overheating and damage.

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IPW65R080CFDA Overview

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Part Image IPW65R080CFDFKSA2 Infineon Technologies AG

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R080CFD Infineon Technologies AG

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R080CFDFKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R080CFDAXK Infineon Technologies AG

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247