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IPW65R080CFDAFKSA1 - Infineon

Description: MOSFET N-Ch 650V 43.3A TO247-3

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IPW65R080CFDAFKSA1 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO 247
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IPW65R080CFDAFKSA1 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO 247
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IPW65R080CFDAFKSA1 Details

  • Manufacturer Part Number:

    IPW65R080CFDAFKSA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    15 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    1160 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    43.3 A

  • Drain-source On Resistance-Max:

    0.08 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    137 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW65R080CFDAFKSA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPW65R080CFDAFKSA1 is -40°C to 150°C.
  • Proper cooling can be achieved by using a heat sink with a thermal resistance of ≤ 1.5 K/W, and ensuring good airflow around the device.
  • The recommended gate resistor value for IPW65R080CFDAFKSA1 is between 10 Ω and 100 Ω, depending on the specific application and switching frequency.
  • Yes, IPW65R080CFDAFKSA1 is qualified according to AEC-Q101, making it suitable for high-reliability applications such as automotive systems.
  • Use a voltage regulator or a voltage supervisor to ensure the device operates within the recommended voltage range of 12 V to 24 V.

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IPW65R080CFDAFKSA1 Overview

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Part Image IPW65R080CFDFKSA2 Infineon Technologies AG

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

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Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R080CFDFKSA1 Infineon Technologies AG

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW65R080CFDAXK Infineon Technologies AG

Power Field-Effect Transistor, 43.3A I(D), 650V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247