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IPW65R190C7 - Infineon

Description: Infineon IPW65R190C7 MOSFET Transistor

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IPW65R190C7 Details

  • Manufacturer Part Number:

    IPW65R190C7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    57 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    13 A

  • Drain-source On Resistance-Max:

    0.19 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    72 W

  • Pulsed Drain Current-Max (IDM):

    49 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW65R190C7 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPW65R190C7 is -40°C to 150°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -20°C to 125°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a sufficient heat sink and thermal interface material (TIM) between the device and the heat sink. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is 650W. Additionally, ensure good airflow around the heat sink to prevent overheating.
  • The recommended gate drive voltage for the IPW65R190C7 is between 10V and 15V. However, it's essential to ensure that the gate drive voltage is within the specified range to prevent damage to the device.
  • Yes, the IPW65R190C7 can be used in a parallel configuration to increase the overall current handling capability. However, it's crucial to ensure that the devices are properly matched and that the gate drive signals are synchronized to prevent uneven current sharing and potential damage to the devices.
  • The maximum allowed voltage transient for the IPW65R190C7 is 650V. It's essential to ensure that the device is not exposed to voltage transients exceeding this value to prevent damage to the device.

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IPW65R190C7 Overview

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