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IPW90R120C3 - Infineon

Description: Infineon IPW90R120C3 N-channel MOSFET Transistor, 36 A, 900 V, 3-Pin TO-247

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IPW90R120C3 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247
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IPW90R120C3 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247
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IPW90R120C3 Details

  • Manufacturer Part Number:

    IPW90R120C3

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Part Package Code:

    TO-247

  • Pin Count:

    3

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    1940 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    900 V

  • Drain Current-Max (ID):

    36 A

  • Drain-source On Resistance-Max:

    0.12 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    417 W

  • Pulsed Drain Current-Max (IDM):

    96 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPW90R120C3 Frequently Asked Questions (FAQs)

  • The maximum junction temperature of the IPW90R120C3 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.
  • To ensure proper cooling, it's essential to provide a good thermal interface between the device and the heat sink. Apply a thin layer of thermal interface material (TIM) to the device's exposed thermal pad, and ensure the heat sink is securely fastened to the device. Additionally, ensure good airflow around the heat sink to dissipate heat efficiently.
  • The recommended gate resistor value for the IPW90R120C3 depends on the specific application and switching frequency. As a general guideline, a gate resistor value between 10 Ω to 22 Ω is suitable for most applications. However, it's essential to consult the datasheet and application notes for specific guidance on gate resistor selection.
  • Yes, the IPW90R120C3 is suitable for high-reliability applications. Infineon Technologies AG has qualified the device according to the AEC-Q101 standard, which ensures the device meets the stringent requirements for automotive and industrial applications. However, it's essential to follow proper design and manufacturing guidelines to ensure the device operates reliably in the target application.
  • To protect the IPW90R120C3 from overvoltage and overcurrent, it's essential to implement proper protection circuits in the design. This may include voltage clamping devices, such as TVS diodes, and current sensing and limiting circuits. Additionally, ensure the device is operated within its specified voltage and current ratings to prevent damage.

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IPW90R120C3 Overview

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Power Field-Effect Transistor, 36A I(D), 900V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247

Part Image IPW90R120C3XK Infineon Technologies AG

Power Field-Effect Transistor, 36A I(D), 900V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247