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IPW95R060PFD7 - Infineon

Description: Integrated ultra-fast body diode Best-in-class reverse recovery charge Qrr Best-in-class FOMRDS(on)* Eoss, reduced Qg, Ciss, andCoss Best-in-class V(GS)thof3VandsmallestV(GS)thvariationof±0.5V Integrated fast body diode Best-in-class Cool MOS™ quality and reliability Fully optimized portfolio Best-in-class RDS(on)in THD and SMD packages ESDprotectionmin.Class2(HB M)

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PCB Footprints
IPW95R060PFD7 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - PG-TO247-3(h=5.3)
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3D Models
IPW95R060PFD7 - Infineon  - 3D model - Transistor Outline, Vertical - PG-TO247-3(h=5.3)
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IPW95R060PFD7 Details

  • Manufacturer Part Number:

    IPW95R060PFD7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Avalanche Energy Rating (Eas):

    228 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    950 V

  • Drain Current-Max (ID):

    74.7 A

  • Drain-source On Resistance-Max:

    0.06 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    446 W

  • Pulsed Drain Current-Max (IDM):

    342 A

  • Surface Mount:

    YES

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IPW95R060PFD7 Overview

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