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IPZ40N04S53R1ATMA1 - Infineon

Description: N-Channel 40 V 40A (Tc) 71W (Tc) Surface Mount PG-TSDSON-8

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Symbol
IPZ40N04S53R1ATMA1 - Infineon - PCB symbol
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PCB Footprints
IPZ40N04S53R1ATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8-33_3.3x3.3
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3D Models
IPZ40N04S53R1ATMA1 - Infineon - 3D model - Other - PG-TSDSON-8-33_3.3x3.3
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IPZ40N04S53R1ATMA1 Details

  • Manufacturer Part Number:

    IPZ40N04S53R1ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0036 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPZ40N04S53R1ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPZ40N04S53R1ATMA1 is -55°C to 175°C.
  • To ensure the MOSFET is fully turned on, apply a gate-source voltage (Vgs) of at least 10V, and ensure the gate current is sufficient to charge the gate capacitance quickly.
  • For optimal performance, use a PCB layout with a low-inductance path for the drain and source pins, and keep the gate trace as short as possible to minimize ringing and oscillations.
  • Yes, the IPZ40N04S53R1ATMA1 is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout and decoupling to minimize ringing and electromagnetic interference (EMI).
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage, and consider adding a current sense resistor and a fuse to protect against overcurrent.

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IPZ40N04S53R1ATMA1 Overview

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