Part Image

IPZ40N04S5L2R8ATMA1 - Infineon

Description: MOSFET MOSFET_(20V 40V)

Download IPZ40N04S5L2R8ATMA1 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPZ40N04S5L2R8ATMA1 - Infineon PCB footprint - Other - Other - IPZ40N04S5L2R8ATMA1-3
click to zoom
3D Models
IPZ40N04S5L2R8ATMA1 - Infineon  - 3D model - Other - IPZ40N04S5L2R8ATMA1-3
click to zoom

IPZ40N04S5L2R8ATMA1 Details

  • Manufacturer Part Number:

    IPZ40N04S5L2R8ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    140 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0038 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JESD-30 Code:

    R-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPZ40N04S5L2R8ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for IPZ40N04S5L2R8ATMA1 is -55°C to 175°C.
  • To minimize switching losses, ensure the gate-source voltage (Vgs) is within the recommended range (typically 4.5V to 15V), and use a gate driver with a low output impedance to reduce ringing and oscillations.
  • To minimize parasitic inductance and capacitance, use a compact PCB layout with short, wide traces, and place the MOSFET close to the driver IC. Avoid using vias under the MOSFET, and use a solid ground plane to reduce inductance.
  • Use a voltage clamp or a zener diode to protect the MOSFET from overvoltage conditions. Implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The recommended gate resistor value depends on the specific application and driver IC used. A typical value is around 10-20 ohms, but consult the driver IC datasheet and application notes for specific recommendations.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPZ40N04S5L2R8ATMA1 Overview

Use the download button to access the IPZ40N04S5L2R8ATMA1 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPZ40, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPZ40N04S5L2R8ATMA1

Showing 0 results