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IPZ40N04S5L7R4ATMA1 - Infineon

Description: INFINEON - IPZ40N04S5L7R4ATMA1 - MOSFET, AEC-Q101, N-CH, 40V, TSDSON

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IPZ40N04S5L7R4ATMA1 - Infineon PCB footprint - Other - Other - PG-TSDSON-8-32_2019
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3D Models
IPZ40N04S5L7R4ATMA1 - Infineon  - 3D model - Other - PG-TSDSON-8-32_2019
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IPZ40N04S5L7R4ATMA1 Details

  • Manufacturer Part Number:

    IPZ40N04S5L7R4ATMA1

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Not Recommended

  • Country Of Origin:

    Austria, Germany, Malaysia

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    26 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    3

  • Avalanche Energy Rating (Eas):

    24 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    40 A

  • Drain-source On Resistance-Max:

    0.0107 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    18 pF

  • JESD-30 Code:

    S-PDSO-N8

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    SQUARE

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    34 W

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Reference Standard:

    AEC-Q101

  • Surface Mount:

    YES

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    NO LEAD

  • Terminal Position:

    DUAL

  • Transistor Element Material:

    SILICON

IPZ40N04S5L7R4ATMA1 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IPZ40N04S5L7R4ATMA1 is -55°C to 175°C.
  • To ensure safe operating area (SOA) for the IPZ40N04S5L7R4ATMA1, follow the guidelines outlined in the datasheet, including limiting the drain-source voltage, drain current, and power dissipation.
  • The recommended gate drive voltage for the IPZ40N04S5L7R4ATMA1 is between 4.5V and 10V, with a maximum gate-source voltage of ±20V.
  • To handle ESD protection for the IPZ40N04S5L7R4ATMA1, follow proper handling and storage procedures, and consider using ESD protection devices or circuits in the application.
  • The thermal resistance (Rth) of the IPZ40N04S5L7R4ATMA1 is approximately 1.5 K/W (junction-to-case) and 60 K/W (junction-to-ambient) in still air.

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IPZ40N04S5L7R4ATMA1 Overview

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