Part Image

IPZ65R045C7 - Infineon

Description: MOSFET N-Ch 700V 46A TO247-4

Download IPZ65R045C7 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IPZ65R045C7 - Infineon PCB footprint - Other - Other - IPZ65R045C7-1
click to zoom
3D Models
IPZ65R045C7 - Infineon  - 3D model - Other - IPZ65R045C7-1
click to zoom

IPZ65R045C7 Details

  • Manufacturer Part Number:

    IPZ65R045C7

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Part Package Code:

    TO-247

  • Package Description:

    GREEN, PLASTIC PACKAGE-4

  • Pin Count:

    3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    HIGH RELIABILITY

  • Avalanche Energy Rating (Eas):

    249 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    46 A

  • Drain-source On Resistance-Max:

    0.045 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    212 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPZ65R045C7 Frequently Asked Questions (FAQs)

  • A good PCB layout for optimal thermal performance would be to have a large copper area connected to the drain pad, and to use thermal vias to dissipate heat to the other side of the board. Additionally, keeping the component placement and routing symmetrical can help to reduce thermal gradients.
  • To ensure proper biasing, make sure to follow the recommended voltage and current ratings in the datasheet. Also, ensure that the gate-source voltage is within the recommended range, and that the device is operated within the safe operating area (SOA) to prevent damage.
  • When paralleling multiple devices, ensure that each device has its own gate resistor and that the gate-source voltage is matched across all devices. Also, consider the current sharing and thermal management to prevent hotspots and ensure even current distribution.
  • To protect the device, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, consider using a current sense resistor and a comparator to detect overcurrent conditions and shut down the device if necessary.
  • For thermal design, consider the device's power dissipation, junction-to-case thermal resistance, and the maximum allowed junction temperature. Ensure good thermal contact between the device and the heat sink, and consider using a thermal interface material to reduce thermal resistance.

Trust Checks

This model has been provided by an expert contributor.
Expert Contribution
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IPZ65R045C7 Overview

Use the download button to access the IPZ65R045C7 schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IPZ65, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IPZ65R045C7

Showing 0 results