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IPZ65R065C7 - Infineon

Description: MOSFET HIGH POWER_NEW

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IPZ65R065C7 - Infineon - PCB symbol
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IPZ65R065C7 - Infineon PCB footprint - Other - Other - IPZ65R065C7-4
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IPZ65R065C7 - Infineon - 3D model - Other - IPZ65R065C7-4
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IPZ65R065C7 Details

  • Manufacturer Part Number:

    IPZ65R065C7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    6

  • Avalanche Energy Rating (Eas):

    171 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    33 A

  • Drain-source On Resistance-Max:

    0.065 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    171 W

  • Pulsed Drain Current-Max (IDM):

    145 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPZ65R065C7 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and spacing to ensure optimal heat dissipation.
  • Infineon recommends using their EiceDRIVER™ gate driver family, specifically the 1EDC or 1EDI families, which are designed to work with the IPZ65R065C7. The selection depends on the specific application requirements, such as voltage, current, and switching frequency.
  • According to Infineon's application note AN2013-03, the maximum allowed overshoot voltage during turn-on and turn-off is 10% of the DC bus voltage, but not exceeding 100 V. Exceeding this limit may reduce the IGBT's lifetime.
  • Infineon recommends implementing a short-circuit detection and protection circuit, such as a desaturation detection circuit, to quickly detect and respond to short-circuit conditions. This can be achieved using external components or integrated into the gate driver IC.
  • For high-power applications, Infineon recommends using a heat sink with a thermal interface material (TIM) and a forced air cooling system. The heat sink should be designed to maintain a maximum junction temperature of 150°C or lower.

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