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IPZA60R024P7XKSA1 - Infineon

Description: MOSFET N-CH 600V 101A TO247-4-3

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IPZA60R024P7XKSA1 Details

  • Manufacturer Part Number:

    IPZA60R024P7XKSA1

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    406 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    600 V

  • Drain Current-Max (ID):

    101 A

  • Drain-source On Resistance-Max:

    0.024 Ω

  • FET Technology:

    SUPERJUNCTION MOSFET

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    291 W

  • Pulsed Drain Current-Max (IDM):

    386 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IPZA60R024P7XKSA1 Frequently Asked Questions (FAQs)

  • Infineon provides a recommended PCB layout in their application note AN2013-03, which includes guidelines for thermal vias, copper thickness, and component placement to minimize thermal resistance.
  • To ensure reliable operation in high-temperature environments, it's essential to follow the recommended operating conditions, use a suitable heat sink, and implement thermal monitoring and protection mechanisms, such as over-temperature protection (OTP) and thermal shutdown.
  • Although the datasheet specifies the maximum rated voltage, it's essential to consider the voltage transient tolerance. Infineon recommends limiting voltage transients to ±10% of the rated voltage to prevent damage or malfunction.
  • Yes, the IPZA60R024P7XKSA1 can be used in a parallel configuration to increase current capability. However, it's crucial to ensure that the devices are properly matched, and the layout is designed to minimize current imbalance and thermal gradients.
  • The recommended gate drive voltage is typically between 10V to 15V, and the current depends on the specific application. A higher gate drive current can improve switching performance, but it also increases power losses. Consult Infineon's application notes for specific guidance.

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