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IPZA65R029CFD7 - Infineon

Description: 650V CoolMOS CFD7 SJ PowerDevice

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PCB Footprints
IPZA65R029CFD7 - Infineon PCB footprint - Other - Other - PG-TO247-4-3_FFW
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3D Models
IPZA65R029CFD7 - Infineon  - 3D model - Other - PG-TO247-4-3_FFW
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IPZA65R029CFD7 Details

  • Manufacturer Part Number:

    IPZA65R029CFD7

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Date Of Intro:

    2020-06-29

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    358 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    650 V

  • Drain Current-Max (ID):

    69 A

  • Drain-source On Resistance-Max:

    0.029 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-247

  • JESD-30 Code:

    R-PSFM-T4

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    4

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    305 W

  • Pulsed Drain Current-Max (IDM):

    304 A

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin (Sn)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

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IPZA65R029CFD7 Overview

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