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IR2235JPBF - Infineon

Description: MOSFET Driver, 6 outputs, 3 Phase Bridge, 10V-20V supply, 500 mA and 70 ohm output, LCC-44

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IR2235JPBF Details

  • Manufacturer Part Number:

    IR2235JPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8542.39.00.60

  • Factory Lead Time:

    20 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    7

  • Additional Feature:

    FLOATING LOAD DRIVER; UNDER VOLTAGE LOCKOUT CIRCUIT

  • High Side Driver:

    YES

  • Input Characteristics:

    STANDARD

  • Interface IC Type:

    BUFFER OR INVERTER BASED IGBT/MOSFET DRIVER

  • JESD-30 Code:

    S-PQCC-J32

  • JESD-609 Code:

    e3

  • Length:

    16.5862 mm

  • Moisture Sensitivity Level:

    3

  • Number of Functions:

    3

  • Number of Terminals:

    32

  • Operating Temperature-Max:

    125 °C

  • Output Characteristics:

    STANDARD

  • Output Peak Current Limit-Nom:

    0.5 A

  • Output Polarity:

    TRUE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Code:

    QCCJ

  • Package Equivalence Code:

    LDCC44,.7SQ

  • Package Shape:

    SQUARE

  • Package Style:

    CHIP CARRIER

  • Peak Reflow Temperature (Cel):

    250

  • Qualification Status:

    Not Qualified

  • Seated Height-Max:

    4.57 mm

  • Supply Voltage-Max:

    20 V

  • Supply Voltage-Min:

    10 V

  • Supply Voltage-Nom:

    15 V

  • Supply Voltage1-Max:

    1200 V

  • Surface Mount:

    YES

  • Technology:

    CMOS

  • Terminal Finish:

    Matte Tin (Sn)

  • Terminal Form:

    J BEND

  • Terminal Pitch:

    1.27 mm

  • Terminal Position:

    QUAD

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Turn-off Time:

    0.95 µs

  • Turn-on Time:

    1 µs

  • Width:

    16.5862 mm

IR2235JPBF Frequently Asked Questions (FAQs)

  • The maximum operating frequency of the IR2235JPBF is 500 kHz, but it can be operated up to 1 MHz with reduced performance.
  • Proper thermal management can be achieved by providing a heat sink with a thermal resistance of less than 10°C/W, and ensuring good airflow around the device. The maximum junction temperature should not exceed 150°C.
  • The recommended dead time for the IR2235JPBF is 100-200 ns, but it can be adjusted based on the specific application requirements.
  • Yes, the IR2235JPBF can be used in a half-bridge configuration, but it requires an external bootstrap diode and a high-side driver IC.
  • The IR2235JPBF has built-in overvoltage protection (OVP) and undervoltage protection (UVP) features. Additionally, external voltage monitoring and protection circuits can be used to ensure the device operates within the recommended voltage range.

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IR2235JPBF Overview

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