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IRF130 - Infineon

Description: IRF130 Series 100 V 0.18 Ohm 12 nC Through Hole N-Channel Power MOSFET - TO-3

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Symbol
IRF130 - Infineon - PCB symbol
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PCB Footprints
IRF130 - Infineon PCB footprint - Other - Other - TO-204AA (Modified TO-3)
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3D Models
IRF130 - Infineon - 3D model - Other - TO-204AA (Modified TO-3)
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IRF130 Details

  • Manufacturer Part Number:

    IRF130

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Avalanche Energy Rating (Eas):

    75 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.21 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    75 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF130 Frequently Asked Questions (FAQs)

  • The IRF130 can operate safely between -55°C to 175°C, but the recommended operating temperature range is -40°C to 150°C for optimal performance.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V to 4V for optimal performance. A higher Vgs can lead to increased power consumption and reduced efficiency.
  • The IRF130 has a maximum continuous drain current (ID) rating of 13A, but it's recommended to derate the current to 10A for optimal reliability and to prevent overheating.
  • To protect the IRF130, use a voltage regulator to limit the voltage to the recommended maximum of 100V. Additionally, use a current sense resistor and a fuse to detect and respond to overcurrent conditions.
  • For optimal thermal performance, use a PCB with a large copper area for heat dissipation. Ensure good thermal conductivity by using thermal vias and a heat sink if necessary. Keep the PCB layout compact to minimize parasitic inductance and capacitance.

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IRF130 Overview

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IRF130 Alternates

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Image Part Number Model
Part Image JANTX2N6756 Infineon Technologies AG

Power Field-Effect Transistor, 14A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
Part Image IRF130 Rochester Electronics LLC

14A, 100V, 0.16ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
Part Image IRF131 Intersil Corporation

Power Field-Effect Transistor, 14A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Part Image JANTXV2N6756 Microsemi Corporation (now Microchip)

Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
Part Image 2N6756 Harris Semiconductor

Power Field-Effect Transistor, 14A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA
For a full list of alternate parts for IRF130, check out Findchips.com