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IRF1405LPBF - Infineon

Description: IRF1405LPBF N-Channel MOSFET Transistor, 131 A, 55 V HEXFET, 3-Pin TO-262 Infineon

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IRF1405LPBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - IRF1405LPBF
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IRF1405LPBF - Infineon  - 3D model - Transistor Outline, Vertical - IRF1405LPBF
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IRF1405LPBF Details

  • Manufacturer Part Number:

    IRF1405LPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-262, 3 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    590 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0053 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    280 pF

  • JEDEC-95 Code:

    TO-262AA

  • JESD-30 Code:

    R-PSIP-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    IN-LINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    680 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF1405LPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF1405LPBF is -55°C to 175°C, as specified in the datasheet. However, it's recommended to operate the device within a temperature range of -40°C to 150°C for optimal performance and reliability.
  • To ensure proper cooling, it's essential to provide a good thermal path from the device to a heat sink or the PCB. Use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and ensure the heat sink is properly attached to the device. Additionally, consider using a thermal pad or thermal tape to improve heat transfer.
  • The recommended gate drive voltage for the IRF1405LPBF is between 10V and 15V. However, the device can tolerate gate drive voltages up to 20V. It's essential to ensure the gate drive voltage is within the recommended range to prevent damage to the device.
  • To protect the IRF1405LPBF from overvoltage and overcurrent, use a voltage regulator or a voltage clamp to limit the voltage across the device. Additionally, consider using a current sense resistor and a fuse or a current limiter to prevent overcurrent conditions. It's also recommended to use a gate driver with built-in overcurrent protection.
  • For optimal performance and reliability, it's recommended to follow a good PCB layout practice. Keep the high-frequency nodes (e.g., gate and drain) as short as possible, and use a solid ground plane to reduce electromagnetic interference (EMI). Additionally, consider using a Kelvin connection for the gate and source pins to reduce parasitic inductance.

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