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IRF1607 - Infineon

Description: MOSFET N-CH 75V 142A TO-220AB

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PCB Footprints
IRF1607 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB 3pin
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IRF1607 - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB 3pin
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IRF1607 Details

  • Manufacturer Part Number:

    IRF1607

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    PLASTIC PACKAGE-3

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    1250 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    75 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0075 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    570 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF1607 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF1607 is not explicitly stated in the datasheet, but it can be determined by consulting Infineon's application note AN2013-03, which provides SOA curves for the device. The SOA is typically limited by the device's thermal and voltage ratings.
  • To ensure proper thermal management, the IRF1607 should be mounted on a heat sink with a thermal resistance of less than 1°C/W. The heat sink should be designed to dissipate the maximum expected power loss, and the device should be attached to the heat sink using a thermal interface material (TIM) with a thermal resistance of less than 0.1°C/W.
  • The recommended gate drive voltage for the IRF1607 is between 10V and 15V, with a maximum gate-source voltage of 20V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI.
  • To protect the IRF1607 from overvoltage and overcurrent, a voltage clamp or surge protector can be used to limit the maximum voltage applied to the device. Additionally, a current sense resistor and a fuse or circuit breaker can be used to detect and respond to overcurrent conditions.
  • The recommended PCB layout for the IRF1607 involves minimizing the distance between the device and the heat sink, using a solid copper plane for the drain connection, and keeping the gate and source connections as short and wide as possible to minimize inductance and resistance.

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