IRF200P222 - Infineon

IRF200P222 Details

• Manufacturer Part Number:

  IRF200P222

• Rohs Code:

  Yes

• Part Life Cycle Code:

  Obsolete

• ECCN Code:

  EAR99

• HTS Code:

  8541.29.00.40

• Manufacturer:

  Infineon Technologies AG

• YTEOL:

  0

• Avalanche Energy Rating (Eas):

  1070 mJ

• Case Connection:

  DRAIN

• Configuration:

  SINGLE WITH BUILT-IN DIODE

• DS Breakdown Voltage-Min:

  200 V

• Drain Current-Max (ID):

  182 A

• Drain-source On Resistance-Max:

  0.0066 Ω

• FET Technology:

  METAL-OXIDE SEMICONDUCTOR

• JEDEC-95 Code:

  TO-247AC

• JESD-30 Code:

  R-PSFM-T3

• JESD-609 Code:

  e3

• Number of Elements:

  1

• Number of Terminals:

  3

• Operating Mode:

  ENHANCEMENT MODE

• Package Body Material:

  PLASTIC/EPOXY

• Package Shape:

  RECTANGULAR

• Package Style:

  FLANGE MOUNT

• Polarity/Channel Type:

  N-CHANNEL

• Pulsed Drain Current-Max (IDM):

  728 A

• Surface Mount:

  NO

• Terminal Finish:

  Tin (Sn)

• Terminal Form:

  THROUGH-HOLE

• Terminal Position:

  SINGLE

• Transistor Application:

  SWITCHING

• Transistor Element Material:

  SILICON