AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
460 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
40 V
Drain Current-Max (ID):
75 A
Drain-source On Resistance-Max:
0.0036 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-220AB
JESD-30 Code:
R-PSFM-T3
JESD-609 Code:
e3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Peak Reflow Temperature (Cel):
260
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
330 W
Pulsed Drain Current-Max (IDM):
850 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Time@Peak Reflow Temperature-Max (s):
10
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRF2204PBF Frequently Asked Questions (FAQs)
The maximum operating temperature range for the IRF2204PBF is -55°C to 175°C.
To ensure proper cooling, a heat sink with a thermal resistance of less than 10°C/W is recommended. Additionally, ensure good airflow around the device and avoid blocking the heat sink fins.
The recommended gate drive voltage for the IRF2204PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
To protect the IRF2204PBF from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) diode, and consider adding overcurrent protection using a fuse or a current sense resistor.
The maximum allowable power dissipation for the IRF2204PBF is 125W, but this can be increased with proper heat sinking and cooling.
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System Verified
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IRF2204PBF Overview
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