Part Image

IRF240 - Infineon

Description: Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3

Download IRF240 Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
3D Models
IRF240 - Infineon  - 3D model
click to zoom
Note! To download footprints and symbols, use the build and request forms below

Build

Launch Build Wizard
Build Wizard not available for this package category!

Request (48 hours)

IRF240 Details

  • Manufacturer Part Number:

    IRF240

  • Part Life Cycle Code:

    Active

  • Package Description:

    HERMETIC SEALED, MODIFIED TO-3, 2 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4.39

  • Avalanche Energy Rating (Eas):

    450 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    200 V

  • Drain Current-Max (ID):

    18 A

  • Drain-source On Resistance-Max:

    0.21 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-204AE

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    125 W

  • Pulsed Drain Current-Max (IDM):

    72 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF240 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF240 is not explicitly stated in the datasheet. However, it can be determined by consulting the application notes and graphs provided in the datasheet. Generally, the SOA is limited by the maximum voltage and current ratings, as well as the thermal characteristics of the device.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or the PCB. This can be achieved by using a thermal interface material (TIM) and a heat sink with a low thermal resistance. The PCB should also be designed to dissipate heat efficiently. Additionally, the device's thermal characteristics, such as the junction-to-case thermal resistance (RthJC), should be considered in the design.
  • The recommended gate drive voltage for the IRF240 is typically between 10V to 15V. However, the optimal gate drive voltage may vary depending on the specific application and the desired switching characteristics. It's essential to consult the datasheet and application notes for more information on gate drive requirements.
  • To protect the IRF240 from overvoltage and overcurrent, it's recommended to use a combination of voltage clamping devices, such as zener diodes or transient voltage suppressors (TVS), and current limiting devices, such as fuses or current sense resistors. Additionally, the device's built-in protection features, such as the internal drain-source diode, should be considered in the design.
  • The recommended PCB layout for the IRF240 involves minimizing the lead length and using a solid ground plane to reduce electromagnetic interference (EMI). The device's pins should be connected to the PCB using a low-inductance path, and the decoupling capacitors should be placed close to the device. A good PCB layout can help reduce electromagnetic interference (EMI) and improve the overall performance of the device.

Trust Checks

No trust score is available for this model.
Trust Score Unavailable
Sponsored

IRF240 Overview

Use the download button to access the IRF240 3D model. You can still request or build the schematic symbol and PCB footprint by using the respective build or request forms on this page.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF24, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF240

Showing 0 results

Select Package Category

Package Categories

Datasheet PDF Preview

IRF240 Alternates

Showing results

Image Part Number Model
Part Image IRF240 TT Electronics Resistors

Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

Part Image IRF240R1 TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 18A I(D), 200V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3