- Datasheet Download Datasheet
- Stock & Prices $ Price & Stock for IRF250P225
- Part Number IRF250P225
- Manufacturer Infineon
- Pin Count 3
- Part Category Transistor
- Package Category Transistor Outline, Vertical
- Footprint Name Transistor Outline, Vertical - TO-247AC Package Outline
- Released Date Nov 25, 2020
- Last Modified Date Mar 7, 2023 4:10 PM UTC
- Pinout / Pin List Click Here (Member Only)
IRF250P225 Details
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Manufacturer Part Number:
IRF250P225
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Rohs Code:
Yes
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Part Life Cycle Code:
Obsolete
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ECCN Code:
EAR99
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HTS Code:
8541.29.00.40
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Manufacturer:
Infineon Technologies AG
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YTEOL:
0
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Avalanche Energy Rating (Eas):
489 mJ
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Configuration:
SINGLE WITH BUILT-IN DIODE
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DS Breakdown Voltage-Min:
250 V
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Drain Current-Max (ID):
69 A
IRF250P225 Frequently Asked Questions (FAQs)
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The maximum safe operating area (SOA) for the IRF250P225 is typically defined by the manufacturer as the maximum voltage and current ratings, which are 250V and 225A respectively. However, it's essential to consider the thermal and electrical stress on the device to ensure reliable operation.
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To ensure proper cooling, it's crucial to provide a sufficient heat sink, thermal interface material, and airflow. The heat sink should be designed to dissipate the maximum power dissipation of the device, which is approximately 250W. Additionally, the thermal interface material should have a low thermal resistance to minimize thermal impedance.
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The recommended gate drive voltage for the IRF250P225 is typically between 10V to 15V. However, it's essential to ensure the gate drive voltage is within the specified range to prevent damage to the device. A higher gate drive voltage can reduce the on-state resistance, but it may also increase the switching losses.
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To protect the IRF250P225 from overvoltage and overcurrent, it's recommended to use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the device. Additionally, a current sense resistor and a fuse can be used to detect and interrupt the current in case of an overcurrent condition.
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The recommended PCB layout for the IRF250P225 should minimize the parasitic inductance and capacitance. This can be achieved by using a compact layout, minimizing the length of the traces, and using a ground plane to reduce the electromagnetic interference (EMI).
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IRF250P225 Overview
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