Part Image

IRF2804PBF - Infineon

Description: Infineon IRF2804PBF N-channel MOSFET, 280 A, 40 V HEXFET, 3-Pin TO-220

Download IRF2804PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF2804PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB(H=4.82mm)
click to zoom
3D Models
IRF2804PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB(H=4.82mm)
click to zoom

IRF2804PBF Details

  • Manufacturer Part Number:

    IRF2804PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Factory Lead Time:

    13 Weeks

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5

  • Additional Feature:

    AVALANCHE RATED, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    540 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    40 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0023 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    330 W

  • Pulsed Drain Current-Max (IDM):

    1080 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    10

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF2804PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF2804PBF is -55°C to 175°C.
  • To ensure reliability, it's essential to follow proper thermal management practices, such as providing adequate heat sinking, using thermal interface materials, and monitoring junction temperature.
  • The recommended gate drive voltage for the IRF2804PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF2804PBF from ESD, handle the device by the body, use an anti-static wrist strap or mat, and store the device in anti-static packaging.
  • The maximum allowable current for the IRF2804PBF is 280A, with a maximum pulsed current of 560A.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF2804PBF Overview

Use the download button to access the IRF2804PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF28, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF2804PBF

Showing 0 results

IRF2804PBF Alternates

Showing results

Image Part Number Model
Part Image IRF2804 Infineon Technologies AG

Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Part Image IRF2804 International Rectifier

Power Field-Effect Transistor, 75A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB