AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Rating (Eas):
340 mJ
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:
75 V
Drain Current-Max (ID):
75 A
Drain-source On Resistance-Max:
0.013 Ω
FET Technology:
METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code:
TO-220AB
JESD-30 Code:
R-PSFM-T3
JESD-609 Code:
e3
Number of Elements:
1
Number of Terminals:
3
Operating Mode:
ENHANCEMENT MODE
Operating Temperature-Max:
175 °C
Operating Temperature-Min:
-55 °C
Package Body Material:
PLASTIC/EPOXY
Package Shape:
RECTANGULAR
Package Style:
FLANGE MOUNT
Polarity/Channel Type:
N-CHANNEL
Power Dissipation-Max (Abs):
230 W
Pulsed Drain Current-Max (IDM):
280 A
Qualification Status:
Not Qualified
Surface Mount:
NO
Terminal Finish:
Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal Form:
THROUGH-HOLE
Terminal Position:
SINGLE
Transistor Application:
SWITCHING
Transistor Element Material:
SILICON
IRF2807PBF Frequently Asked Questions (FAQs)
The maximum operating temperature range for the IRF2807PBF is -55°C to 175°C.
To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
The recommended gate resistor value for the IRF2807PBF is typically between 10Ω to 100Ω, depending on the specific application and switching frequency.
Yes, the IRF2807PBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.
Use a suitable voltage regulator, overvoltage protection (OVP) circuit, and overcurrent protection (OCP) circuit to prevent damage to the device.
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IRF2807PBF Overview
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