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IRF3205 - Infineon

Description: HEXFET® Power MOSFET, TO-220AB

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Symbol
IRF3205 - Infineon - PCB symbol
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PCB Footprints
IRF3205 - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220 AB
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3D Models
IRF3205 - Infineon - 3D model - Transistor Outline, Vertical - TO-220 AB
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IRF3205 Details

  • Manufacturer Part Number:

    IRF3205

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4

  • Additional Feature:

    AVALANCHE RATED

  • Avalanche Energy Rating (Eas):

    264 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation Ambient-Max:

    150 W

  • Pulsed Drain Current-Max (IDM):

    390 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF3205 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF3205 is typically defined by the manufacturer as the region where the device can operate safely without damage. According to Infineon, the SOA for the IRF3205 is defined by the boundaries of Vds = 55V, Id = 110A, and Pd = 300W.
  • To ensure proper thermal management, it's essential to provide a good thermal path from the device to a heat sink or other cooling mechanism. This can be achieved by applying a thermal interface material (TIM) to the device, using a heat sink with a high thermal conductivity, and ensuring good airflow around the device.
  • The recommended gate drive voltage for the IRF3205 is typically between 10V to 15V, with a maximum gate-source voltage of ±20V. However, it's essential to consult the datasheet and application notes for specific gate drive requirements.
  • To protect the IRF3205 from overvoltage and overcurrent conditions, it's recommended to use a combination of voltage and current sensing circuits, along with protective devices such as zener diodes, TVS diodes, or fuses. Additionally, implementing overcurrent protection (OCP) and overvoltage protection (OVP) circuits can help prevent damage to the device.
  • For optimal performance and reliability, it's essential to follow good PCB layout and routing practices for the IRF3205. This includes using a solid ground plane, minimizing trace lengths and inductance, and keeping high-frequency signals away from sensitive analog circuits. Consult the datasheet and application notes for specific layout and routing recommendations.

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IRF3205 Overview

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IRF3205 Alternates

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Part Image IRF3205VPBF Infineon Technologies AG

Power Field-Effect Transistor, 110A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Part Image IRF3205HR International Rectifier

Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
For a full list of alternate parts for IRF3205, check out Findchips.com