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IRF3205PBF - Infineon

Description: MOSFET N-Channel 55V 110A HEXFET TO220AB Infineon IRF3205PBF N-channel MOSFET Transistor, 110 A, 55 V, 3-Pin TO-220AB

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PCB Footprints
IRF3205PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB
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3D Models
IRF3205PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB
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IRF3205PBF Details

  • Manufacturer Part Number:

    IRF3205PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • Country Of Origin:

    Mainland China

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    5.1

  • Additional Feature:

    AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    264 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    55 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.008 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    200 W

  • Pulsed Drain Current-Max (IDM):

    390 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF3205PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF3205PBF is -55°C to 175°C.
  • To ensure proper cooling, ensure a good thermal interface between the device and the heat sink, and use a heat sink with a thermal resistance of less than 1°C/W.
  • The recommended gate drive voltage for the IRF3205PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Use a voltage clamp or a zener diode to protect the device from overvoltage, and implement overcurrent protection using a current sense resistor and a comparator or a dedicated overcurrent protection IC.
  • The maximum allowable power dissipation for the IRF3205PBF is 130W, but this can be increased with proper heat sinking and cooling.

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IRF3205PBF Overview

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Part Image IRF3205VPBF Infineon Technologies AG

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Part Image IRF3205HR International Rectifier

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For a full list of alternate parts for IRF3205PBF, check out Findchips.com