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IRF350 - Infineon

Description: Trans MOSFET N-CH 400V 14A 3-Pin(2+Tab) TO-3

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PCB Footprints
IRF350 - Infineon PCB footprint - Other - Other - IRF350-6
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IRF350 - Infineon  - 3D model - Other - IRF350-6
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IRF350 Details

  • Manufacturer Part Number:

    IRF350

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4.46

  • Avalanche Energy Rating (Eas):

    11.3 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    14 A

  • Drain-source On Resistance-Max:

    0.4 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    56 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF350 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF350 is not explicitly stated in the datasheet. However, it can be estimated based on the device's thermal resistance, maximum junction temperature, and voltage ratings. As a general guideline, the SOA can be assumed to be around 10-15V and 10-15A for the IRF350.
  • To ensure the IRF350 is fully turned on, the gate-source voltage (Vgs) should be at least 10V, and the gate drive voltage should be able to supply sufficient current to charge the gate capacitance quickly. A gate resistor value of around 10-20 ohms is recommended to limit the gate current and prevent ringing.
  • The maximum allowed drain-source voltage (Vds) for the IRF350 is 400V. However, it's recommended to derate the voltage to around 350-370V to ensure reliable operation and to account for voltage spikes and transients.
  • Thermal management is critical for the IRF350. Ensure good heat sinking, use a thermal interface material (TIM) with a thermal conductivity of at least 1 W/m-K, and maintain a maximum junction temperature (Tj) of 150°C. A heat sink with a thermal resistance of around 1-2°C/W is recommended.
  • For optimal performance and to minimize electromagnetic interference (EMI), use a compact PCB layout with short, wide traces for the drain, source, and gate connections. Keep the gate trace as short as possible and use a ground plane to reduce inductance and noise.

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IRF350 Overview

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IRF350 Alternates

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Image Part Number Model
Part Image IRF350 TT Electronics Resistors

Power Field-Effect Transistor, 14A I(D), 400V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Image JANTX2N6768 Motorola Semiconductor Products

Power Field-Effect Transistor, 14A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Image IRF352 Texas Instruments

TRANSISTOR,MOSFET,N-CHANNEL,400V V(BR)DSS,13A I(D),TO-3

Part Image IRF352 Thomson Consumer Electronics

Power Field-Effect Transistor, 13A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

Part Image IRF350 Harris Semiconductor

Power Field-Effect Transistor, 15A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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