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IRF360 - Infineon

Description: Trans MOSFET N-CH 400V 25A 3-Pin(2+Tab) TO-204AE

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Symbol
IRF360 - Infineon - PCB symbol
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PCB Footprints
IRF360 - Infineon PCB footprint - Other - Other - 39.37mm x 25.53mm
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3D Models
IRF360 - Infineon - 3D model - Other - 39.37mm x 25.53mm
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IRF360 Details

  • Manufacturer Part Number:

    IRF360

  • Part Life Cycle Code:

    Active

  • Package Description:

    TO-3, 2 PIN

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4.46

  • Avalanche Energy Rating (Eas):

    980 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    400 V

  • Drain Current-Max (ID):

    25 A

  • Drain-source On Resistance-Max:

    0.23 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-204AE

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    300 W

  • Pulsed Drain Current-Max (IDM):

    100 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF360 Frequently Asked Questions (FAQs)

  • The IRF360 can operate safely between -55°C to 175°C, but the recommended operating temperature range is -40°C to 150°C for optimal performance and reliability.
  • The IRF360 has a thermal pad on the bottom of the package, which should be connected to a heat sink or a thermal interface material to ensure efficient heat dissipation. A thermal resistance of less than 1°C/W is recommended.
  • The IRF360 has a maximum voltage rating of 400V, but it's recommended to operate it at a maximum voltage of 350V to ensure reliable operation and minimize the risk of breakdown.
  • It's recommended to use a fuse or a current limiter in series with the IRF360 to protect it from overcurrent. Additionally, a voltage clamp or a transient voltage suppressor can be used to protect the device from overvoltage and voltage spikes.
  • The recommended gate drive voltage for the IRF360 is between 10V to 15V, with a maximum gate-source voltage of ±20V. A gate drive voltage of 12V is a common choice for most applications.

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IRF360 Overview

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IRF360 Alternates

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Part Image IRF360 Rochester Electronics LLC

25A, 400V, 0.2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AE
Part Image IRF360PBF International Rectifier

Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
Part Image IRF360 TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
Part Image IRF360 Harris Semiconductor

Power Field-Effect Transistor, 25A I(D), 400V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE
Part Image IRF360R1 TT Electronics Resistors

Power Field-Effect Transistor, 25A I(D), 400V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3
For a full list of alternate parts for IRF360, check out Findchips.com