Part Image

IRF3703PBF - Infineon

Description: MOSFET 30V 1 N-CH HEXFET 2.8mOhms 209nC

Download IRF3703PBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF3703PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB_2024
click to zoom
3D Models
IRF3703PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB_2024
click to zoom

IRF3703PBF Details

  • Manufacturer Part Number:

    IRF3703PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • HTS Code:

    8541.29.00.95

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    AVALANCHE RATED, ULTRA-LOW RESISTANCE

  • Avalanche Energy Rating (Eas):

    1700 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    75 A

  • Drain-source On Resistance-Max:

    0.0039 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • JESD-609 Code:

    e3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    230 W

  • Pulsed Drain Current-Max (IDM):

    1000 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Matte Tin (Sn) - with Nickel (Ni) barrier

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF3703PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF3703PBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRF3703PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF3703PBF is suitable for high-frequency switching applications, but ensure that the device is operated within its specified switching frequency and duty cycle ratings.
  • Handle the device with ESD-protective equipment, use an ESD-protective wrist strap, and ensure the device is stored in an ESD-protective package.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF3703PBF Overview

Use the download button to access the IRF3703PBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF37, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF3703PBF

Showing 0 results

IRF3703PBF Alternates

Showing results

Image Part Number Model
Part Image IRF3703 International Rectifier

Power Field-Effect Transistor, 210A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB