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IRF3704ZSPBF - Infineon

Description: IRF3704ZSPBF N-Channel MOSFET, 67 A, 20 V HEXFET, 3-Pin D2PAK Infineon

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IRF3704ZSPBF - Infineon PCB footprint - Other - Other - D2PAK
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IRF3704ZSPBF - Infineon  - 3D model - Other - D2PAK
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IRF3704ZSPBF Details

  • Manufacturer Part Number:

    IRF3704ZSPBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    36 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    42 A

  • Drain-source On Resistance-Max:

    0.0079 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    190 pF

  • JESD-30 Code:

    R-PSSO-G2

  • JESD-609 Code:

    e3

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Peak Reflow Temperature (Cel):

    260

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    57 W

  • Pulsed Drain Current-Max (IDM):

    260 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    YES

  • Terminal Finish:

    MATTE TIN OVER NICKEL

  • Terminal Form:

    GULL WING

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    30

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF3704ZSPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF3704ZSPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified voltage and current ratings.
  • The recommended gate drive voltage for the IRF3704ZSPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF3704ZSPBF is suitable for switching applications due to its low RDS(on) and high switching speed.
  • Use a suitable voltage regulator and overcurrent protection circuitry to prevent damage from overvoltage and overcurrent conditions.

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Part Image IRF3704ZS Infineon Technologies AG

Power Field-Effect Transistor, 42A I(D), 20V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET