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IRF3708PBF - Infineon

Description: IRF3708PBF N-Channel MOSFET, 62 A, 30 V HEXFET, 3-Pin TO-220AB Infineon

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IRF3708PBF - Infineon PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220AB PACKAGE-ren1
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IRF3708PBF - Infineon  - 3D model - Transistor Outline, Vertical - TO-220AB PACKAGE-ren1
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IRF3708PBF Details

  • Manufacturer Part Number:

    IRF3708PBF

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Avalanche Energy Rating (Eas):

    213 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    30 V

  • Drain Current-Max (ID):

    62 A

  • Drain-source On Resistance-Max:

    0.012 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    52 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Peak Reflow Temperature (Cel):

    NOT SPECIFIED

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    87 W

  • Pulsed Drain Current-Max (IDM):

    248 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Time@Peak Reflow Temperature-Max (s):

    NOT SPECIFIED

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF3708PBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF3708PBF is -55°C to 175°C.
  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the device should be mounted on a PCB with a thermal pad and thermal vias to dissipate heat efficiently.
  • The recommended gate drive voltage for the IRF3708PBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • To protect the IRF3708PBF from overvoltage and overcurrent, a voltage clamp or a transient voltage suppressor (TVS) can be used. Additionally, a current sense resistor and a fuse can be used to detect and respond to overcurrent conditions.
  • The maximum allowed power dissipation for the IRF3708PBF is 150W, assuming a maximum junction temperature of 175°C and a thermal resistance of 1°C/W.

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Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB