Part Image

IRF3717TRPBF - Infineon

Description: Infineon IRF3717TRPBF N-channel MOSFET, 20 A, 20 V HEXFET, 8-Pin SOIC

Download IRF3717TRPBF Model
Schematic
symbols
Schematic symbol is unavailable for download
PCB
footprints
PCB footprint is unavailable for download
3D
models
3D model is unavailable for download
PCB Footprints
IRF3717TRPBF - Infineon PCB footprint - Small Outline Packages - Small Outline Packages - SO-8
click to zoom
3D Models
IRF3717TRPBF - Infineon  - 3D model - Small Outline Packages - SO-8
click to zoom

IRF3717TRPBF Details

  • Manufacturer Part Number:

    IRF3717TRPBF

  • Pbfree Code:

    Yes

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Obsolete

  • Package Description:

    SOP-8

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    0

  • Additional Feature:

    GREEN

  • Avalanche Energy Rating (Eas):

    32 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    20 V

  • Drain Current-Max (ID):

    20 A

  • Drain-source On Resistance-Max:

    0.0044 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    MS-012AA

  • JESD-30 Code:

    R-PDSO-G8

  • Moisture Sensitivity Level:

    1

  • Number of Elements:

    1

  • Number of Terminals:

    8

  • Operating Mode:

    ENHANCEMENT MODE

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    SMALL OUTLINE

  • Polarity/Channel Type:

    N-CHANNEL

  • Pulsed Drain Current-Max (IDM):

    160 A

  • Surface Mount:

    YES

  • Terminal Form:

    GULL WING

  • Terminal Position:

    DUAL

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF3717TRPBF Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF3717TRPBF is -55°C to 175°C.
  • To ensure reliability, follow proper thermal management, use a suitable heat sink, and ensure the device is operated within its specified ratings and guidelines.
  • The recommended gate drive voltage for the IRF3717TRPBF is between 10V and 15V, with a maximum gate-source voltage of ±20V.
  • Yes, the IRF3717TRPBF is suitable for high-frequency switching applications up to 1 MHz, but ensure proper PCB layout, decoupling, and thermal management to minimize losses and ensure reliability.
  • Use a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) mechanism, such as a fuse or current-sensing resistor, to prevent damage to the device.

Trust Checks

This model has been provided by community users.
Community Provided
This model has been verified by system checks.
System Verified
This model has been reviewed by community users.
Community Approved
Sponsored

IRF3717TRPBF Overview

Use the download button to access the IRF3717TRPBF schematic symbol, PCB footprint, and 3D model.
To find more CAD model downloads similar to this part, try a partial part number search, like IRF37, or try a keyword search, such as Power Field-Effect Transistors

Parts related to IRF3717TRPBF

Showing 0 results

IRF3717TRPBF Alternates

Showing results

Image Part Number Model
Part Image IRF3717PBF International Rectifier

Power Field-Effect Transistor, 20A I(D), 20V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

Part Image IRF3717PBF Infineon Technologies AG

Power Field-Effect Transistor, 20A I(D), 20V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA