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IRF450 - Infineon

Description: Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) TO-3

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IRF450 Details

  • Manufacturer Part Number:

    IRF450

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Infineon Technologies AG

  • YTEOL:

    4.46

  • Avalanche Energy Rating (Eas):

    8 mJ

  • Case Connection:

    DRAIN

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    500 V

  • Drain Current-Max (ID):

    12 A

  • Drain-source On Resistance-Max:

    0.5 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • JEDEC-95 Code:

    TO-204AA

  • JESD-30 Code:

    O-MBFM-P2

  • JESD-609 Code:

    e0

  • Number of Elements:

    1

  • Number of Terminals:

    2

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    150 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    METAL

  • Package Shape:

    ROUND

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    150 W

  • Pulsed Drain Current-Max (IDM):

    48 A

  • Qualification Status:

    Not Qualified

  • Surface Mount:

    NO

  • Terminal Finish:

    Tin/Lead (Sn/Pb)

  • Terminal Form:

    PIN/PEG

  • Terminal Position:

    BOTTOM

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF450 Frequently Asked Questions (FAQs)

  • The maximum safe operating area (SOA) for the IRF450 is not explicitly stated in the datasheet. However, it can be determined by consulting the SOA curves provided in the application notes or by contacting Infineon's technical support.
  • To ensure proper thermal management, ensure a good thermal interface between the MOSFET and the heat sink, use a thermal interface material (TIM) if necessary, and design the heat sink to provide adequate cooling. Consult the thermal resistance and power dissipation specifications in the datasheet to determine the required heat sink size and design.
  • The recommended gate drive voltage for the IRF450 is between 10V and 15V. However, the optimal gate drive voltage may vary depending on the specific application and switching frequency. Consult the gate charge characteristics in the datasheet to determine the optimal gate drive voltage for your application.
  • To protect the IRF450 from overvoltage and overcurrent, use a voltage clamp or a transient voltage suppressor (TVS) to limit the voltage across the MOSFET, and consider using a current sense resistor and a fuse or a current limiter to detect and respond to overcurrent conditions.
  • The maximum allowed dv/dt for the IRF450 is not explicitly stated in the datasheet. However, as a general guideline, it is recommended to limit the dv/dt to 1-2 kV/μs to prevent voltage-induced turn-on and ensure reliable operation.

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Part Image JANTX2N6770 Infineon Technologies AG

Power Field-Effect Transistor, 12A I(D), 500V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204

Part Image JAN2N6770 Unitrode Corporation

Power Field-Effect Transistor, 12A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Image IRF451 STMicroelectronics

Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

Part Image IRF450R1 TT Electronics Power and Hybrid / Semelab Limited

Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

Part Image IRF450 Texas Instruments

Power Field-Effect Transistor, 13A I(D), 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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