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IRF510PBF-BE3 - Vishay

Description: MOSFET 100V N-CH HEXFET D2-PAK

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IRF510PBF-BE3 - Vishay - PCB symbol
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PCB Footprints
IRF510PBF-BE3 - Vishay PCB footprint - Transistor Outline, Vertical - Transistor Outline, Vertical - TO-220-
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3D Models
IRF510PBF-BE3 - Vishay - 3D model - Transistor Outline, Vertical - TO-220-
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IRF510PBF-BE3 Details

  • Manufacturer Part Number:

    IRF510PBF-BE3

  • Rohs Code:

    Yes

  • Part Life Cycle Code:

    Active

  • ECCN Code:

    EAR99

  • Manufacturer:

    Vishay Intertechnologies

  • YTEOL:

    5

  • Avalanche Energy Rating (Eas):

    75 mJ

  • Configuration:

    SINGLE WITH BUILT-IN DIODE

  • DS Breakdown Voltage-Min:

    100 V

  • Drain Current-Max (ID):

    5.6 A

  • Drain-source On Resistance-Max:

    0.54 Ω

  • FET Technology:

    METAL-OXIDE SEMICONDUCTOR

  • Feedback Cap-Max (Crss):

    15 pF

  • JEDEC-95 Code:

    TO-220AB

  • JESD-30 Code:

    R-PSFM-T3

  • Number of Elements:

    1

  • Number of Terminals:

    3

  • Operating Mode:

    ENHANCEMENT MODE

  • Operating Temperature-Max:

    175 °C

  • Operating Temperature-Min:

    -55 °C

  • Package Body Material:

    PLASTIC/EPOXY

  • Package Shape:

    RECTANGULAR

  • Package Style:

    FLANGE MOUNT

  • Polarity/Channel Type:

    N-CHANNEL

  • Power Dissipation-Max (Abs):

    43 W

  • Pulsed Drain Current-Max (IDM):

    20 A

  • Surface Mount:

    NO

  • Terminal Form:

    THROUGH-HOLE

  • Terminal Position:

    SINGLE

  • Transistor Application:

    SWITCHING

  • Transistor Element Material:

    SILICON

IRF510PBF-BE3 Frequently Asked Questions (FAQs)

  • The maximum operating temperature range for the IRF510PBF-BE3 is -55°C to 175°C.
  • To ensure proper biasing, the gate-source voltage (Vgs) should be between 2V to 4V for optimal performance. Additionally, the drain-source voltage (Vds) should be within the recommended range of 100V.
  • The recommended gate resistor value for the IRF510PBF-BE3 is between 1kΩ to 10kΩ, depending on the specific application and switching frequency.
  • Yes, the IRF510PBF-BE3 is suitable for high-frequency switching applications up to 1MHz, but it's essential to consider the device's switching characteristics, such as rise and fall times, to ensure optimal performance.
  • To protect the IRF510PBF-BE3 from overvoltage and overcurrent conditions, consider using a voltage clamp or a zener diode to limit the voltage, and a current sense resistor or a fuse to detect and respond to overcurrent conditions.

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IRF510PBF-BE3 Overview

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